Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"24 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 160\u00b5A","Series":"SIPMOS\u00ae","Package \/ Case":"*","Supplier Device Package":"*","Datasheets":"BSP315P","Rds On (Max) @ Id, Vgs":"800 mOhm @ 1.17A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @ Vds":"160pF @ 25V","Drain to Source Voltage (Vdss)":"60V","Current...